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InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 v File

Kim, Kyung Rok , Yoon, Young Jun , Cho, Seongjae , Seo, Jae Hwa , Lee, Jung-Hee , Bae, Jin-Hyuk , Cho, Eou-Sik , Kang, In Man

Article Issue Date2013-11 View85
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