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Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment File

Han, Jimin , Jeong, Boyoung , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-08 View39
Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide File File

Han, Jimin , Jeong, Boyoung , Kim, Yuri , Suh, Joonki , Jeong, Hongsik , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2022-08 View49
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