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Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III-V MOS devices File

Min, K. S. , Kang, S. H. , Kim, J. K. , Yum, J. H. , Jhon, Y. I. , Hudnall, Todd W. , Bielawski, C. W. , Banerjee, S. K. , Bersuker, G. , Jhon, M. S. , et al

Article Issue Date2014-02 View87
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