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Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier File

Kim, Jun Beom , Nandi, Dip K. , Kim, Tae Hyun , Jang, Yujin , Bae, Jong-Seong , Hong, Tae Eun , Kim, Soo-Hyun

Article Issue Date2019-09 View257
Effects of AlOx incorporation into atomic layer deposited Ru thin films: Applications to Cu direct plating technology File

Hong, Tae Eun , Cheon, Taehoon , Kim, Soo-Hyun , Kim, Jeong-Kyu , Park, Young-Bae , Kwon, Oh Joong , Kim, Myung Jun , Kim, Jae Jeong

Article Issue Date2013-12 View89
Self‐Formation of a Ru/ZnO Multifunctional Bilayer for the Next‐Generation Interconnect Technology via Area‐Selective Atomic Layer Deposition File

Mori, Yuki , Cheon, Taehoon , Kotsugi, Yohei , Kim, Youn‐Hye , Park, Yejin , Ansari, Mohd Zahid , Mohapatra, Debananda , Jang, Yujin , Bae, Jong‐Seong , Kwon, Woobin , et al

Article Issue Date2023-08 View134
The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect File

Mun, Ki-Yeung , Hong, Tae Eun , Cheon, Taehoon , Jang, Yujin , Lim, Byoung-Yong , Kim, Sunjung , Kim, Soo-Hyun

Article Issue Date2014-07 View84
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