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Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3 File

Kim, Soo-Hyun , Kim, JK , Kwak, N , Sohn, H , Kim, J , Jung, SH , Hong, MR , Lee, SH , Collins, J

Article Issue Date2006-01 View132
Characteristics of ALD tungsten nitride using B2H6, WF6, and NH3 and application to contact barrier layer for DRAM File

Kim, Soo-Hyun , Kim, Jun-Ki , Lee, Ju Hee , Kwak, Nohjung , Kim, Jinwoong , Jung, Sung-Hoon , Hong, Mi-Ran , Lee, Sang Hyeob , Collins, Josh , Sohn, Hyunchul

Article Issue Date2007-06 View245
Characterization of atomic layer deposited WNxCy thin film as a diffusion barrier for copper metallization File

Kim, Soo-Hyun , Oh, SS , Kim, HM , Kang, DH , Kim, KB , Li, WM , Haukka, S , Tuominen, M

Article Issue Date2004-03 View96
Effect of ion bombardment during chemical vapor deposition of TiN films File

Park, Ki‐Chul , Kim, Soo‐Hyun , Kim, Ki‐Bum

Article Issue Date2000-07 View98
Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon File

Kim, Soo-Hyun , Nam, KT , Datta, A , Kim, KB

Article Issue Date2002-11 View169
The effect of ion beam bombardment on the properties of Ta(C)N films deposited from pentakis-diethylamido-tantalum File

Kim, Soo-Hyun , Im, Se-Joon , Kim, Ki-Bum

Article Issue Date2002-08 View111
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