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Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization File

Kim, Jun Beom , Kim, Soo-Hyun , Han, Won Seok , Lee, Do-Joong

Article Issue Date2016-07 View133
Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3 File

Kim, Soo-Hyun , Kim, JK , Kwak, N , Sohn, H , Kim, J , Jung, SH , Hong, MR , Lee, SH , Collins, J

Article Issue Date2006-01 View132
Characteristics of ALD tungsten nitride using B2H6, WF6, and NH3 and application to contact barrier layer for DRAM File

Kim, Soo-Hyun , Kim, Jun-Ki , Lee, Ju Hee , Kwak, Nohjung , Kim, Jinwoong , Jung, Sung-Hoon , Hong, Mi-Ran , Lee, Sang Hyeob , Collins, Josh , Sohn, Hyunchul

Article Issue Date2007-06 View245
Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization File

Nam, Ki Tae , Datta, Arindom , Kim, Soo-Hyun , Kim, Ki-Bum

Article Issue Date2001-10 View87
Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization File

Datta, A , Nam, KT , Kim, Soo-Hyun , Kim, KB

Article Issue Date2002-07 View104
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