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Artificial synaptic characteristics with strong analog memristive switching in a Pt/ CeO2/ Pt structure File

Kim, Hyung Jun , Zheng, Hong , Park, Jong-Sung , Kim, Dong Hun , Kang, Chi Jung , Jang, Jun Tae , Kim, Dae Hwan , Yoon, Tae-Sik

Article Issue Date2017-07 View250
Forming-free resistive switching characteristics of Ag/CeO2/Pt devices with a large memory window File

Zheng, Hong , Kim, Hyung Jun , Yang, Paul , Park, Jong-Sung , Kim, Dong Wook , Lee, Hyun Ho , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2017-05 View107
Memcapacitive characteristics in reactive-metal (Mo, Al)/HfOX/n-Si structures through migration of oxygen by applied voltage File

Yang, Paul , Noh, Young Jun , Baek, Yoon-Jae , Zheng, Hong , Kang, Chi Jung , Lee, Hyun Ho , Yoon, Tae-Sik

Article Issue Date2016-02 View145
Synaptic transistor with a reversible and analog conductance modulation using a Pt/HfOx/n-IGZO memcapacitor File

Yang, Paul , Kim, Hyung Jun , Zheng, Hong , Beom, Geon Won , Park, Jong-Sung , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2017-06 View93
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