| 2003-05 | Effect of growth interruption on In-rich InGaN/GaN single quantum well structures | Kwon, Soon-Yong; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Sun, YP; Cho, YH; Yoon, E | ARTICLE | 566 |
| 2005-10 | Electroreflectance and photoluminescence study of InN | Yoon, JW; Kim, SS; Cheong, H; Seo, HC; Kwon, Soon-Yong; Kim, HJ; Shin, Y; Yoon, E; Park, YS | ARTICLE | 532 |
| 2003-06 | Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties | Kim, HJ; Kwon, Soon-Yong; Yim, S; Na, H; Kee, B; Yoon, E; Kim, J; Park, SH; Jeon, H; Kim, S; Seo, JH; Park, K; Seon, MS; Sone, C; Nam, OH; Park, Y | ARTICLE | 641 |
| 2005-06 | Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties | Kwon, Soon-Yong; Kim, HJ; Na, H; Kim, YW; Seo, HC; Kim, HJ; Shin, Y; Yoon, E; Sun, Y; Cho, YH; Yoon, JW; Cheong, HM | ARTICLE | 508 |
| 2004-08 | Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition | Kim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, DH; Oh, HJ; Yoon, S; Sone, C; Park, Y; Yoon, E | ARTICLE | 509 |
| 2006-02 | In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition | Kwon, Soon-Yong; Kim, HJ; Na, H; Kim, YW; Seo, HC; Kim, HJ; Shin, Y; Yoon, E; Park, YS | ARTICLE | 550 |
| 2000-12 | In-situ, real-time spectral reflectance monitoring of GaN growth | Na, H; Kim, HJ; Kwon, Soon-Yong; Yoon, E; Moon, Y; Kim, MH | ARTICLE | 579 |
| 2004-12 | Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading | Kwon, Soon-Yong; Cho, MH; Moon, P; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Moon, DW; Sun, Y; Cho, YH; Yoon, E | ARTICLE | 646 |
| 2004-12 | Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clusters | Sun, YP; Cho, YH; Kim, HM; Kang, TW; Kwon, Soon-Yong; Yoon, E | ARTICLE | 439 |
| 2002 | Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammonia | Kwon, Soon-Yong; Kim, HJ; Kee, B; Na, H; Yoon, E | ARTICLE | 701 |
| 2005-05 | Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells | Kwon, Soon-Yong; Baik, SI; Kim, YW; Kim, HJ; Ko, DS; Yoon, E; Yoon, JW; Cheong, H; Park, YS | ARTICLE | 562 |
| 2005-10 | Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition | Kwon, Soon-Yong; Kim, HJ; Kim, YW; Yoon, E | ARTICLE | 553 |
| 2005-07 | Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy | Kim, EK; Kim, JS; Kwon, Soon-Yong; Kim, HJ; Yoon, E | ARTICLE | 526 |
| 2004-09 | The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition | Na, H; Kim, HJ; Kwon, Soon-Yong; Sone, C; Park, Y; Yoon, E | ARTICLE | 566 |
| 2003 | The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition | Kim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Cho, YH; Sun, YP; Yoon, E | ARTICLE | 637 |
