| 2014-11 | Designed three-dimensional freestanding single-crystal carbon architectures | Park, Ji-Hoon; Cho, Dae-Hyun; Moon, Youngkwon; Shin, Ha-Chul; Ahn, Sung-Joon; Kwak, Sang Kyu; Shin, Hyeon-Jin; Lee, Changgu; Ahn, Joung Rea | ARTICLE | 863 |
| 2019-03-28 | Dislocations in Bilayer Transition Metal Dichalcogenides: Effects of Morphological Defects in Substrate | Kim, Jung Hwa; Kim, Se-yang; Cho, Yeonchoo; Park, Hyo-ju; Shin, Hyeon-Jin; Kwon, Soon-Yong; Lee, Zonghoon | CONFERENCE | 8 |
| 2018-01 | Effect of semiconductor polymer backbone structures and side-chain parameters on the facile separation of semiconducting single-walled carbon nanotubes from as-synthesized mixtures | Lee, Dennis T.; Chung, Jong Won; Park, Geonhee; Kim, Yun-Tae; Lee, Chang Young; Cho, Yeonchoo; Yoo, Pil J.; Han, Jae-Hee; Shin, Hyeon-Jin; Kim, Woo-Jae | ARTICLE | 971 |
| 2019-04 | Interface-Driven Partial Dislocation Formation in 2D Heterostructures | Kim, Jung Hwa; Kim, Se-Yang; Cho, Yeonchoo; Park, Hyo Ju; Shin, Hyeon-Jin; Kwon, Soon-Yong; Lee, Zonghoon | ARTICLE | 290 |
| 2021-02 | Reply to: On the measured dielectric constant of amorphous boron nitride | Hong, Seokmo; Lee, Min-Hyun; Kim, Sang Won; Lee, Chang-Seok; Ma, Kyung Yeol; Kim, Gwangwoo; Yoon, Seong In; Antidormi, Aleandro; Roche, Stephan; Shin, Hyeon-Jin; Chhowalla, Manish Chhowalla; Shin, Hyeon Suk | ARTICLE | 36 |
| 2020-12 | Spontaneous Formation of a ZnO Monolayer by the Redox Reaction of Zn on Graphene Oxide | Son, Seungwoo; Cho, Yeonchoo; Hong, Hyo-Ki; Lee, Jongyeong; Kim, Jung Hwa; Kim, Kangsik; Lee, Yeongdong; Yoon, Aram; Shin, Hyeon-Jin; Lee, Zonghoon | ARTICLE | 28 |
| 2020-06 | Ultralow-dielectric-constant amorphous boron nitride | Hong, Seokmo; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yeongdong; Ma, Kyung Yeol; Kim, Gwangwoo; Yoon, Seong In; Ihm, Kyuwook; Kim, Ki-Jeong; Shin, Tae Joo; Kim, Sang Won; Jeon, Eun-chae; Jeon, Hansol; Kim, Ju-Young; Lee, Hyung-Ik; Lee, Zonghoon; Antidormi, Aleandro; Roche, Stephan; Chhowalla, Manish; Shin, Hyeon-Jin; Shin, Hyeon Suk | ARTICLE | 249 |
