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Analog Synaptic Characteristic in Bilayered Gd-Doped Ceria and CeO2 Memristors for Neuromorphic Computing

Moon, Sola , Park, Kitae , Chung, Peter Hayoung , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View49
Analog Synaptic Characteristics of CeO2-based Memristor Crossbar Array for Neuromorphic Computing

Park, Kitae , Ryu, Jiyeon , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View24
Electroforming-Free Low Switching Operation in CeO2-based 1S1R Memristor Device for Neuromorphic Computing Applications

Sahu, Dwipak Prasad , Park, Kitae , Chung, Peter Hayoung , Moon, Sola , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-13 View24
Electroforming-free threshold switching of NbOx-based selector devices by controlling conducting phases in the NbOx layer for the application to crossbar array architectures File File

Park, Kitae , Ryu, Jiyeon , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2022-06 View66
Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VOx)/Pt Device through Two-Step Resistance Change by Ag Filament Formation File

Ryu, Jiyeon , Park, Kitae , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Article Issue Date2024-05 View62
Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors File

Sahu, Dwipak Prasad , Park, Kitae , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2022-05 View42
Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing File

Park, Kitae , Chung, Peter Hayoung , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Article Issue Date2022-08 View76
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing File File

Sahu, Dwipak Prasad , Park, Kitae , Chung, Peter Hayoung , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2023-06 View42
Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment File

Han, Jimin , Jeong, Boyoung , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-08 View62
Resistive Switching Behaviors of CeO2–Based Memristors Depending on Electrode Materials for Non-Volatile Memory and Artificial Synaptic Device Applications

Ko, Hanju , Park, Kitae , Moon, Sola , Ryu, Jiyeon , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-09 View44
Self-Selective Crossbar Synapse Array with n-ZnO/p-NiOx/n-ZnO Structure for Neuromorphic Computing File

Chung, Peter Hayoung , Ryu, Jiyeon , Seo, Daejae , Sahu, Dwipak Prasad , Song, Minju , Kim, Junghwan , Yoon, Tae-Sik

Article Issue Date2025-02 View49
Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing File

Moon, Sola , Park, Kitae , Chung, Peter Hayoung , Sahu, Dwipak Prasad , Yoon, Tae-Sik

Article Issue Date2023-11 View74
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