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Showing results 1 to 9 of 9

Issue DateTitleAuthor(s)TypeView
2015-07Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P.; Roy, Anupam; Ghosh, Rudresh; Sonde, Sushant; Kang, Sangwoo; Chang, Jiwon; Trivedi, Tanuj; Dey, Rik; Guchhait, Samaresh; Larentis, Stefano; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.ARTICLE502
2010-08Analytical Model of Short-Channel Double-Gate JFETsChang, Jiwon; Kapoor, Ashok K.; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE470
2013-11Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE391
2014-04Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE364
2014-02Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE360
2011-06Density functional study of ternary topological insulator thin filmsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE365
2011-10Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE396
2015-12Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE464
2012-12Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE394
Showing results 1 to 9 of 9

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