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Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate File

Park, Kibog , Go, Heung Seok , Jeon, Youngeun , Pelz, Jonathan P. , Zhang, Xuan , Skowronski, Marek

Article Issue Date2011-12 View50
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