| 2003-05 | Effect of growth interruption on In-rich InGaN/GaN single quantum well structures | Kwon, Soon-Yong; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Sun, YP; Cho, YH; Yoon, E | ARTICLE | 518 |
| 2003-06 | Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties | Kim, HJ; Kwon, Soon-Yong; Yim, S; Na, H; Kee, B; Yoon, E; Kim, J; Park, SH; Jeon, H; Kim, S; Seo, JH; Park, K; Seon, MS; Sone, C; Nam, OH; Park, Y | ARTICLE | 587 |
| 2004-08 | Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition | Kim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, DH; Oh, HJ; Yoon, S; Sone, C; Park, Y; Yoon, E | ARTICLE | 469 |
| 2013-01 | How to assess patent infringement risks: a semantic patent claim analysis using dependency relationships | Lee, Changyong; Song, B; Park, Y | ARTICLE | 706 |
| 2004-09 | The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition | Na, H; Kim, HJ; Kwon, Soon-Yong; Sone, C; Park, Y; Yoon, E | ARTICLE | 522 |
| 2003 | The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition | Kim, HJ; Na, H; Kwon, Soon-Yong; Seo, HC; Kim, HJ; Shin, Y; Lee, KH; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Cho, YH; Sun, YP; Yoon, E | ARTICLE | 595 |
