| 2017-03 | Controlling the orientations of h-BN during growth on transition metals by chemical vapor deposition | Zhao, Ruiqi; Zhao, Xiaolei; Liu, Zhirong; Ding, Feng; Liu, Zhongfan | ARTICLE | 222 |
| 2022-01 | Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth | Cheng, Ting; Sun, Luzhao; Liu, Zhirong; Ding, Feng; Liu, Zhongfan | ARTICLE | 239 |
| 2021-04 | The Mechanism of Graphene Vapor-Solid Growth on Insulating Substrates | Cheng, Ting; Liu, Zhirong; Liu, Zhongfan; Ding, Feng | ARTICLE | 103 |
| 2015-11 | The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth | Zhao, Ruiqi; Li, Feifei; Liu, Zhirong; Liuc, Zhongfan; Ding, Feng | ARTICLE | 177 |
| 2021-06 | Theoretical calculation boosting the chemical vapor deposition growth of graphene film | Cheng, Ting; Sun, Luzhao; Liu, Zhirong; Ding, Feng; Liu, Zhongfan | ARTICLE | 191 |
