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Analyzing the Contact-Doping Effect in In₂O₃ FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors File

Lin, Jian-Yu , Niu, Chang , Lin, Zehao , Lee, Sumi , Kim, Taehyun , Lee, Jungho , Liu, Chang , Lu, Juanjuan , Wang, Haiyan , Alam, Muhammad Ashraful , et al

Article Issue Date2025-06 View15
Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric

Lin, Zehao , Niu, Chang , Jang, Hyeongjun , Kim, Taehyun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-06-10 View27
First Demonstration of Top-Gate Enhancement- Mode ALD In2O3 FETs With High Thermal Budget of 600 °°C for DRAM Applications File

Lin, Jian-Yu , Zhang, Zhuocheng , Lin, Zehao , Niu, Chang , Zhang, Yizhi , Zhang, Yifan , Kim, Taehyun , Jang, H. , Sung, C. , Hong, M. , et al

Article Issue Date2024-10 View29
Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In2O3 Transistor Contacts

Lin, Jian-Yu , Niu, Chang , Lin, Zehao , Kim, Taehyun , Park, Beomjin , Jang, Hyeongjun , Jeong, Changwook , Ye, Peide

Conference Paper Issue Date2024-12-07 View29
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