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Issue DateTitleAuthor(s)TypeView
2013-07Metal salt-derived In-Ga-Zn-O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistorsJeong, Sunho; Lee, Ji-Yoon; Lee, Sun Sook; Seo, Yeong-Hui; Kim, So-Yun; Park, Jang-Ung; Ryu, Beyong-Hwan; Yang, Wooseok; Moon, Jooho; Choi, YoungminARTICLE701
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