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Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface File

Cho, YH , Kim, DS , Choe, BD , Lim, H , Lee, JI , Kim, D

Article Issue Date1997-08 View90
Strong femtosecond degenerate four-wave mixing signals from 350 mu m thick undoped and n-type doped InP far below band gap

Yu, S , Lee, JI , Kim, D , Kim, DS , Lee, JH

Article Issue Date1997-04 View137
Strong instantaneous contribution in femtosecond degenerate four-wave mixing from 350 mu m InP due to virtual excitation File

Yu, SY , Chu, JH , Lee, JI , Kim, D , Yee, YH , Kim, DS , Leem, JY , Lee, CR , Lee, JH

Article Issue Date1996-07 View90
Temperature dependence of a femtosecond degenerate four-wave mixing signal from 350-mu m-thick undoped InP far below the band gap File

Yu, SK , Lee, JI , Kim, D , Kim, DS , Yee, YH , Lee, JH

Article Issue Date1997-06 View116
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