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Showing results 1 to 6 of 6

Issue DateTitleAuthor(s)TypeView
2005-01A 0.18-mu m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)Cho, Woo Yeong; Cho, Beak-Hyung; Choi, Byung-Gil; Oh, Hyung-Rok; Kang, Sangbeom; Kim, Ki-Sung; Kim, Kyung-Hee; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Hwang, Youngnam; Ahn, S.; Koh, Gwan-Hyeob; Jeong, Gitae; Jeong, Hongsik; Kim, KinamARTICLE119
2000-07A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyondHa, Daewon; Shin, Dongwon; Koh, Gwan-Hyeob; Lee, Jaegu; Lee, Sanghyeon; Ahn, Yong-Seok; Jeong, Hongsik; Chung, Taeyoung; Kim, KinamARTICLE112
2005-04Ge(2)Sb(2)Te(5) confined structures and integration of 64Mb phase-change random access memoryYeung, Fai; Ahn, Su-Jin; Hwang, Young-Nam; Jeong, Chang-Wook; Song, Yoon-Jong; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jae-Hyun; Shin, Jae-Min; Jeong, Won-Cheol; Kim, Young-Tae; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, KinamARTICLE102
2006-04Highly reliable ring-type contact for high-density phase change memoryJeong, Chang-Wook; Ahn, Su-Jin; Hwang, Young-Nam; Song, Yoon-Jong; Oh, Jac-Hee; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jong-Hyun; Park, Jae-Hyun; Shin, Jac-Min; Yeung, Fai; Jeong, Won-Cheol; Kim, Jeong-In; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, KinamARTICLE109
2005-04Programming characteristics of phase change random access memory using phase change simulationsKim, Young-Ta; Hwang, Young-Nam; Lee, Keun-Ho; Lee, Se-Ho; Jeong, Chang-Wook; Ahn, Su-Jin; Yeung, Fai; Koh, Gwan-Hyeob; Jeong, Heong-Sik; Chung, Won-Young; Kim, Tai-Kyung; Park, Young-Kwan; Kim, Ki-Nam; Kong, Jeong-TaekARTICLE103
2007-06Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elementsIe, Sang Yub; Bea, Byung Tack; Ahn, Young-kun; Chang, M. Y.; You, D. G.; Cho, M. H.; Jeong, K.; Oh, Jae-Hee; Koh, Gwan-Hyeob; Jeong, HongsikARTICLE115
Showing results 1 to 6 of 6

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