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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)TypeView
2014-04L-g=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layerKoh, D.; Kwon, H. M.; Kim, T-W; Kim, D-H; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Banerjee, S. K.ARTICLE72
2020-02Magnetocaloric effect in Tb2O3 and Dy2O3 nanoparticles at cryogenic temperaturesShinde, K. P.; Tien, V. M.; Huang, L.; Park, H-R; Yu, S-C; Chung, K. C.; Kim, D-HARTICLE97
Showing results 1 to 2 of 2

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