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Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process File

Lee, N. J. , Kang, T. S. , Hu, Q. , Lee, T. S. , Yoon, Tae-Sik , Lee, H. H. , Yoo, E. J. , Choi, Y. J. , Kang, C. J.

Article Issue Date2018-06 View21
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