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Issue DateTitleAuthor(s)TypeView
2005-04Robust three-metallization back end of line process for 0.18 mu m embedded ferroelectric random access memoryKang, Seung-Kuk; Rhie, Hyoung-Seub; Kim, Hyun-Ho; Koo, Bon-Jae; Joo, Heung-Jin; Park, Jung-Hun; Kang, Young-Min; Choi, Do-Hyun; Lee, Sung-Young; Jeong, Hong-Sik; Kim, KinamARTICLE110
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