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Showing results 1 to 20 of 23

Issue DateTitleAuthor(s)TypeView
2007-01A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operationKang, Sangbeom; Cho, Woo Yeong; Cho, Beak-Hyung; Lee, Kwang-Jin; Lee, Chang-Soo; Oh, Hyung-Rok; Choi, Byung-Gil; Wang, Qi; Kim, Hye-Jin; Park, Mu-Hui; Ro, Yn Hwan; Kim, Suyeon; Ha, Choong-Duk; Kim, Ki-Sung; Kim, Young-Ran; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Jeong, Gitae; Jeong, Hongsik; Kim, Kinam; Shin, YunSuengARTICLE117
2005-01A 0.18-mu m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)Cho, Woo Yeong; Cho, Beak-Hyung; Choi, Byung-Gil; Oh, Hyung-Rok; Kang, Sangbeom; Kim, Ki-Sung; Kim, Kyung-Hee; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Hwang, Youngnam; Ahn, S.; Koh, Gwan-Hyeob; Jeong, Gitae; Jeong, Hongsik; Kim, KinamARTICLE118
1999-11A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAMYoon, Hongil; Cha, Gi-Won; Yoo, Changsik; Kim, Nam-Jong; Kim, Keum-Yong; Lee, Chang Ho; Lim, Kyu-Nam; Lee, Kyuchan; Jeon, Jun-Young; Jung, Tae Sung; Jeong, Hongsik; Chung, Tae-Young; Kim, Kinam; Cho, Soo InARTICLE120
2000-07A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyondHa, Daewon; Shin, Dongwon; Koh, Gwan-Hyeob; Lee, Jaegu; Lee, Sanghyeon; Ahn, Yong-Seok; Jeong, Hongsik; Chung, Taeyoung; Kim, KinamARTICLE112
2012-04Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching CharacteristicsRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-GookARTICLE150
2015-09Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor depositionChae, Eulyong; Lee, Kyumin; Lee, Hwan; Ko, Daehong; Jeong, Hongsik; Sohn, HyunchulARTICLE156
2017-03Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealingJung, Sang Min; Park, Chul Jin; Jeong, Hongsik; Shin, Moo WhanARTICLE134
2009-09Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron SpectroscopyBaeck, Ju Heyuck; Ann, Young-kun; Jeong, Kwang-Ho; Cho, Mann-Ho; Ko, Dae-Hong; Oh, Jae-Hee; Jeong, HongsikARTICLE116
2015-05Emulation of spike-timing dependent plasticity in nano-scale phase change memoryKang, Dae-Hwan; Jun, Hyun-Goo; Ryoo, Kyung-Chang; Jeong, Hongsik; Sohn, HyunchulARTICLE137
2019-05Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network TrainingLee, Jung-Hoon; Jeong, Hongsik; Lim, Dong-Hyeok; Ma, Huimin; Shi, LupingARTICLE211
2009-04Hydrogen and Stress-Induced De-lamination in an IrO2 Layer of Ferroelectric Random Access MemoriesKim, Jai-Hyun; Jung, Dong Jin; Kim, Hyun-Ho; Hong, Young Ki; Lee, Eun Sun; Kim, Song Yi; Ko, Han Kyoung; Jung, Ju Young; Choi, Do Yeon; Kang, SeungKuk; Kim, Heesan; Jung, Won Woong; Kang, Jin Young; Kang, Young Min; Lee, Sungyung; Jeong, HongsikARTICLE115
2012-07Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power ApplicationRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-GookARTICLE153
2019-01Memristor devices for neural networksJeong, Hongsik; Shi, LupingARTICLE171
2016-08Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cellsKwon, Yongwoo; Park, Byoungnam; Yang, Heesun; Hwang, Jin-Ha; Kang, Dae-Hwan; Jeong, Hongsik; Song, YunheubARTICLE142
2002-10Novel Cell Architecture for High Performance of 512-Mb DRAM with 0.12-µm Design RuleLee, Jaegoo; Lee, Juyong; Lee, Jaekyu; Kwak, Donghwa; Jeong, Gitae; Chung, Taeyoung; Cho, Changhyun; Kim, Minsang; Shin, Sooho; Koh, Kwanhyeob; Jeong, Hongsik; Kim, KinamARTICLE97
2012-06Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament ControllabilityRyoo, Kyung-Chang; Kim, Sungjun; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-GookARTICLE138
2011-04Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching CharacteristicsRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-GookARTICLE101
2007-01Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memoryPark, Jong-Bong; Park, Gyeong-Su; Baik, Hion-Suck; Lee, Jang-Ho; Jeong, Hongsik; Kim, KinamARTICLE119
2012-04Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory StructureRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-GookARTICLE152
1993-01TEMPERATURE AND SIZE DEPENDENT EXCITONIC RELAXATION PROCESS IN GAAS/ALGAAS QUANTUM-WELLSJeong, Hongsik; Lee, In-Ja; Seo, Jung-Chul; Lee, Minyung; Kim, Dongho; Park, Seong-Ju; Park, Seung-Han; Kim, UngARTICLE99
Showing results 1 to 20 of 23

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