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Atomic Layer Deposited Highly Conductive Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects File

Park, Chaehyun , Kweon, Minjeong , Mohapatra, Debananda , Cheon, Taehoon , Bae, Jong-Seong , Jeong, Daeyoon , Park, Young-Bae , Kim, Soo-Hyun

Conference Paper Issue Date2025-06-03 View28
Effects of the TiN diffusion barrier and post-annealing between Ru and SiO2 films on the interfacial adhesion energy for advanced interconnections File

Son, Kirak , Kim, Gahui , Jeong, Daeyoon , Kim, Soo-Hyun , Park, Young-Bae

Article Issue Date2025-03 View116
Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition File

Park, Chaehyun , Kweon, Minjeong , Mohapatra, Debananda , Cheon, Taehoon , Bae, Jong-Seong , Jeong, Daeyoon , Jang, Hyunwoo , Shim, Seungwon , Park, Young-Bae , Kang, Youngho , et al

Article Issue Date2025-07 View84
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