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Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices File

Yum, J. H. , Akyol, T. , Lei, M. , Hudnall, T. , Bersuker, G. , Downer, M. , Bielawski, C. W. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-03 View53
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