or enter first few letters:
Search
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:
Update

Showing results 1 to 8 of 8

Issue DateTitleAuthor(s)TypeView
2020-08Empirical scaling of then=2 error field penetration threshold in tokamaksLogan, N. C.; Park, J. -K.; Hu, Q.; Paz-Soldan, C.; Markovic, T.; Wang, H.; In, Y.; Piron, L.; Piovesan, P.; Myers, C. E.; Maraschek, M.; Wolfe, S. M.; Strait, E. J.; Munaretto, S.ARTICLE68
2020-09Localizing resonant magnetic perturbations for edge localized mode control in KSTARYang, S. M.; Park, J-K; Logan, N. C.; Zhu, C.; Hu, Q.; Jeon, Y. M.; In, Y.; Ko, W. H.; Kim, S. K.; Lee, Y. H.; Na, Y. S.ARTICLE47
2012-10Nanocrystal floating gate memory with indium gallium zinc oxide channel and Pt- Fe2O3 core-shell nanocrystalsLee, S.C.; Hu, Q.; Lee, J.Y.; Baek, Y.-J.; Lee, H.H.; Yoon, Tae-SikARTICLE7
2011-10Resistive switching characteristics of core-shell nanoparticles of metal-oxide on flexible substrateYoo, J.-W.; Hu, Q.; Baek, Y.-J.; Kang, C.J.; Lee, H.H.; Yoon, Tae-SikARTICLE7
2012-10Resistive switching of iron oxide nanoparticles in patterned array structure on flexible substrateKim, J.-D.; Yoo, J.W.; Baek, Y.-J.; Kim, H.J.; Hu, Q.; Kang, C.J.; Yoon, Tae-SikARTICLE8
2020-08Robustness of the tokamak error field correction tolerance scalingLogan, N. C.; Park, J-K; Hu, Q.; Paz-Soldan, C.; Markovic, T.; Wang, H. H.; In, Y.; Piron, L.; Piovesan, P.; Myers, C. E.; Maraschek, M.; Wolfe, S. M.; Strait, E. J.; Munaretto, S.ARTICLE70
2018-06Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset processLee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, Tae-Sik; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.ARTICLE12
2010-10-12Vertically and laterally self-aligned double-layer of nanocrystals in nanopatterned dielectric layer for nanocrystal floating gate memory deviceHu, Q.; Eom, T.-K.; Kim, S.-H.; Kim, H.-J.; Lee, H.H.; Kim, Y.-S.; Ryu, D.Y.; Kim, K.-B.; Yoon, Tae-SikCONFERENCE8
Showing results 1 to 8 of 8

MENU