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First Demonstration of Top-Gate Enhancement- Mode ALD In2O3 FETs With High Thermal Budget of 600 °°C for DRAM Applications File

Lin, Jian-Yu , Zhang, Zhuocheng , Lin, Zehao , Niu, Chang , Zhang, Yizhi , Zhang, Yifan , Kim, Taehyun , Jang, H. , Sung, C. , Hong, M. , et al

Article Issue Date2024-10 View31
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