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Issue DateTitleAuthor(s)TypeView
2017-11Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase EpitaxyHong, Ji-Eun; Kim, Namwoo; Yoon, Hyun; Jo, Yim Hyun; Kim, Dong Suk; Seo, Kwanyong; Kim, Ka-HyunARTICLE1369
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