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Artificial Synaptic Properties in Oxygen-Based ElectrochemicalRandom-Access Memory with CeO2 Nanoparticle Assembly as GateInsulator for Neuromorphic Computing File

Jeong, Boyoung , Noh, Taeyun , Han, Jimin , Ryu, Jiyeon , Park, Jae-Gwan , Kim, Younguk , Choi, Yonghoon , Lee, Sehyun , Park, Jongnam , Yoon, Tae-Sik

Article Issue Date2025-03 View71

Charge-Storage-Based vs. Non-Charge-Storage-Based 1T Non-Volatile Memory through the Interaction between Oxide Semiconductor Channel and Gate Oxide Layer

Han, Jimin , Jeong, Boyoung , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-08 View105

Charge-Trap Memory Characteristics with UV/Ozone-Treated HfO2-x Gate Oxide and Oxide Semiconductor Channel Layer

Noh, Taeyun , Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-03-09 View62

Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO2 Charge-Trap Layer for Charge-Trap Flash MemoryCl File

Noh, Taeyun , Han, Jimin , Jeong, Boyoung , Park, Jae-Gwan , Kim, Kihyeun , Lee, Minju , Kim, Bio , Choi, Hanmei , Yoon, Tae-Sik

Article Issue Date2025-02 View42

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution File File

Jeong, Boyoung , Chung, Peter Hayoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2024-03 View101

Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO2-x Gate Insulator and a Zinc Oxide Channel Layer File

Han, Jimin , Noh, Taeyun , Jeong, Boyoung , Chung, Peter Hayoung , Park, Garam , Lee, Min-Hyun , Kim, Yumin , Yoon, Tae-Sik

Article Issue Date2025-06 View66

Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors File

Sahu, Dwipak Prasad , Park, Kitae , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2022-05 View98

Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing File File

Sahu, Dwipak Prasad , Park, Kitae , Chung, Peter Hayoung , Han, Jimin , Yoon, Tae-Sik

Article Issue Date2023-06 View137

Low-Operation Voltage Non-Volatile Memory Characteristics with Oxide-Semiconductor Thin-Film Transistors Through Interaction Between Oxide Semiconductor Channel and Gate Oxide

Han, Jimin , Jeong, Boyoung , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View88

Non-Charge Storage Based Nonvolatile Memory with IGZO Oxide Semiconductor and LiCoOx Charge Trap & Ion Supplying Layer with Large Memory Window

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Conference Paper Issue Date2023-04-12 View72

Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2-x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment File

Han, Jimin , Jeong, Boyoung , Sahu, Dwipak Prasad , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-08 View127

Nonvolatile Memory and Artificial Synapse Characteristics of Electrochemical Random-Access Memory with Atomic Layer Deposited ZnO and HfO2−x Layers through Oxygen Ion-Exchange

Han, Jimin , Yoon, Tae-Sik

Conference Paper Issue Date2024-12-14 View89

Nonvolatile Memory and Artificial Synaptic Characteristics in Thin-Film Transistors with Low-Temperature Atomic Layer Deposited ZnO Channel and HfO2-x Gate Oxide by Oxygen Ion Exchange

Han, Jimin , Yoon, Tae-Sik

Conference Paper Issue Date2024-11-26 View60

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide File File

Han, Jimin , Jeong, Boyoung , Kim, Yuri , Suh, Joonki , Jeong, Hongsik , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2022-08 View138

Tunable Multilevel Gate Oxide Capacitance and Flat-Band Voltage Shift Characteristics by Filament Formation in Double-Floating-Gate Metal-Oxide-Semiconductor Capacitors File

Han, Jimin , Park, Kitae , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2023-04 View132

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application File

Beom, Keonwon , Han, Jimin , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2021-07 View90

Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO x Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor File

Jeong, Boyoung , Han, Jimin , Noh, Taeyun , Yoon, Tae-Sik

Article Issue Date2023-05 View115

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