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Issue DateTitleAuthor(s)TypeView
2014-04L-g=100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layerKoh, D.; Kwon, H. M.; Kim, T-W; Kim, D-H; Hudnall, Todd W.; Bielawski, Christopher W.; Maszara, W.; Veksler, D.; Gilmer, D.; Kirsch, P. D.; Banerjee, S. K.ARTICLE72
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