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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)TypeView
2007-01A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operationKang, Sangbeom; Cho, Woo Yeong; Cho, Beak-Hyung; Lee, Kwang-Jin; Lee, Chang-Soo; Oh, Hyung-Rok; Choi, Byung-Gil; Wang, Qi; Kim, Hye-Jin; Park, Mu-Hui; Ro, Yn Hwan; Kim, Suyeon; Ha, Choong-Duk; Kim, Ki-Sung; Kim, Young-Ran; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Jeong, Gitae; Jeong, Hongsik; Kim, Kinam; Shin, YunSuengARTICLE89
2005-01A 0.18-mu m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)Cho, Woo Yeong; Cho, Beak-Hyung; Choi, Byung-Gil; Oh, Hyung-Rok; Kang, Sangbeom; Kim, Ki-Sung; Kim, Kyung-Hee; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Hwang, Youngnam; Ahn, S.; Koh, Gwan-Hyeob; Jeong, Gitae; Jeong, Hongsik; Kim, KinamARTICLE99
2006-01Enhanced write performance of a 64-Mb phase-change random access memoryOh, Hyung-rok; Cho, Beak-hyung; Cho, Woo Yeong; Kang, Sangbeom; Choi, Byung-gil; Kim, Hye-jin; Kim, Ki-sung; Kim, Du-eung; Kwak, Choong-keun; Byun, Hyun-geun; Jeong, Gi-tae; Jeong, Hong-sik; Kim, KinamARTICLE92
Showing results 1 to 3 of 3

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