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Showing results 1 to 17 of 17

Issue DateTitleAuthor(s)TypeView
2015-07Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P.; Roy, Anupam; Ghosh, Rudresh; Sonde, Sushant; Kang, Sangwoo; Chang, Jiwon; Trivedi, Tanuj; Dey, Rik; Guchhait, Samaresh; Larentis, Stefano; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.ARTICLE498
2010-08Analytical Model of Short-Channel Double-Gate JFETsChang, Jiwon; Kapoor, Ashok K.; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE467
2013-11Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE388
2014-04Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE363
2018-09Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky ContactsSarangapani, Prasad; Weber, Cory; Chang, Jiwon; Cea, Stephen; Povolotskyi, Michael; Klimeck, Gerhard; Kubis, TillmannARTICLE10
2014-02Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE359
2011-06Density functional study of ternary topological insulator thin filmsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE362
2011-10Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE393
2019-03Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in ArseneneSeo, Dongwook; Chang, JiwonARTICLE147
2015-06Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistorsChang, JiwonARTICLE372
2018-07Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructuresChang, JiwonARTICLE230
2015-04Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETsChang, JiwonARTICLE311
2020-02Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETsSeo, Jae Eun; Seo, Dongwook; Chang, JiwonARTICLE111
2015-12Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE462
2015-02Theoretical study of phosphorene tunneling field effect transistorsChang, Jiwon; Hobbs, ChrisARTICLE335
2012-12Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE389
2019-07Tunnelling-based ternary metal–oxide–semiconductor technologyJeong, Jae Won; Choi, Young Eun; Kim, Woo Seok; Park, Jee-Ho; Kim, Sunmean; Shin, Sunhae; Lee, Kyuho; Chang, Jiwon; Kim, Seong-Jin; Kim, Kyung RokARTICLE662
Showing results 1 to 17 of 17

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