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Showing results 1 to 13 of 13

Issue DateTitleAuthor(s)TypeView
2015-07Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P.; Roy, Anupam; Ghosh, Rudresh; Sonde, Sushant; Kang, Sangwoo; Chang, Jiwon; Trivedi, Tanuj; Dey, Rik; Guchhait, Samaresh; Larentis, Stefano; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.ARTICLE585
2010-08Analytical Model of Short-Channel Double-Gate JFETsChang, Jiwon; Kapoor, Ashok K.; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE569
2013-11Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE473
2014-04Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE457
2014-02Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE447
2014-01Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTsJohnson, Derek W.; Yum, Jung Hwan; Hudnall, Todd W.; Mushinski, Ryan M.; Bielawski, Christopher W.; Roberts, John C.; Wang, Wei-E; Banerjee, Sanjay K.; Harris, H. RustyARTICLE67
2011-06Density functional study of ternary topological insulator thin filmsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE470
2011-10Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F.; Banerjee, Sanjay K.; Sahu, BhagawanARTICLE493
2011-12Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability ImprovementYum, Jung Hwan; Bersuker, Gennadi; Akyol, Tarik; Ferrer, D. A.; Lei, Ming; Park, Keun Woo; Hudnall, Todd W.; Downer, Mike C.; Bielawski, Christopher W.; Yu, Edward T.; Price, Jimmy; Lee, Jack C.; Banerjee, Sanjay K.ARTICLE18
2014-02Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applicationsRamon, Michael E.; Movva, Hema C. P.; Chowdhury, Sk. Fahad; Parrish, Kristen N.; Rai, Amritesh; Magnuson, Carl W.; Ruoff, Rodney S.; Akinwande, Deji; Banerjee, Sanjay K.ARTICLE18
2014-05Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applicationsKoh, Donghyi; Yum, Jung-Hwan; Banerjee, Sanjay K.; Hudnall, Todd W.; Bielawski, Christopher; Lanford, William A.; French, Benjamin L.; French, Marc; Henry, Patrick; Li, Han; Kuhn, Markus; King, Sean W.ARTICLE61
2015-12Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE560
2012-12Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE507
Showing results 1 to 13 of 13

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