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Reversible capacitance changes in the MOS capacitor with an ITO/CeO2/p-Si structure File

Park, Daehoon , Kim, Minju , Beom, Keonwon , Cho, Seong-Yong , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2019-05 View3
Single- and double-gate synaptic transistor with TaOx gate insulator and IGZO channel layer File

Beom, Keonwon , Yang, Paul , Park, Daehoon , Kim, Hyung Jun , Lee, Hyun Ho , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2019-01 View2
Single-and Double-Gate Synaptic Transistor with a TaOx Gate Insulator and an IGZO Semiconductor Channel Layer

Beom, Keonwon , Yang, Paul , Park, Daehoon , Kim, Minju , Kim, Sunki , Kim, Hyung Jun , Kang, Chi Jung , Yoon, Tae-Sik

Conference Paper Issue Date2019-04-23 View7
Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack File

Yang, Paul , Park, Daehoon , Beom, Keonwon , Kim, Hyung Jun , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2018-07 View2
Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure File

Kim, Hyung Jun , Park, Daehoon , Yang, Paul , Beom, Keonwon , Kim, Min Ju , Shin, Chansun , Kang, Chi Jung , Yoon, Tae-Sik

Article Issue Date2018-06 View5
Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application File

Beom, Keonwon , Han, Jimin , Kim, Hyun-Mi , Yoon, Tae-Sik

Article Issue Date2021-07 View18
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