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A study of highly crystalline novel beryllium oxide film using atomic layer deposition File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd. W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-11 View15
Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices File

Yum, J. H. , Akyol, T. , Lei, M. , Hudnall, T. , Bersuker, G. , Downer, M. , Bielawski, C. W. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-03 View13
Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices File

Yum, J. H. , Akyol, T. , Ferrer, D. A. , Lee, J. C. , Banerjee, S. K. , Lei, M. , Downer, M. , Hudnall, Todd. W. , Bielawski, C. W. , Bersuker, G.

Article Issue Date2011-11 View14
Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2012-01 View15
Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric File

Yum, J. H. , Akyol, T. , Lei, M. , Ferrer, D. A. , Hudnall, Todd. W. , Downer, M. , Bielawski, C. W. , Bersuker, G. , Lee, J. C. , Banerjee, S. K.

Article Issue Date2011-07 View25
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