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Chang, Jiwon (장지원)

Department
School of Electrical and Computer Engineering(전기전자컴퓨터공학부)
Research Interests
Nanoscale devices based on non-conventional materials, quantum and Boltzmann transport simulation of nanoscale devices, ab-initio simulation of non-conventional materials
Lab
Exploratory Device Research Lab
E-Mail
jiwon.chang@unist.ac.kr
Website
http://edrl.unist.ac.kr/
This table browses all dspace content
Issue DateTitleAuthor(s)TypeViewAltmetrics
201512Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxideValsaraj, Amithraj; Chang, Jiwon; Rai, Amritesh, et alARTICLE70 Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
201507Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide EncapsulationRai, Amritesh; Valsaraj, Amithraj; Movva, Hema C. P., et alARTICLE140 Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
201506Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistorsChang, JiwonARTICLE59 Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
201504Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETsChang, JiwonARTICLE46 Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
201502Theoretical study of phosphorene tunneling field effect transistorsChang, Jiwon; Hobbs, ChrisARTICLE54 Theoretical study of phosphorene tunneling field effect transistors
201404Atomistic simulation of the electronic states of adatoms in monolayer MoS2Chang, Jiwon; Larentis, Stefano; Tutuc, Emanuel, et alARTICLE52 Atomistic simulation of the electronic states of adatoms in monolayer MoS2
201402Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE48 Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
201311Atomistic full-band simulations of monolayer MoS2 transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE55 Atomistic full-band simulations of monolayer MoS2 transistors
201212Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistorsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.ARTICLE46 Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
201110Dielectric capping effects on binary and ternary topological insulator surface statesChang, Jiwon; Jadaun, Priyamvada; Register, Leonard F., et alARTICLE38 Dielectric capping effects on binary and ternary topological insulator surface states
201106Density functional study of ternary topological insulator thin filmsChang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K., et alARTICLE34 Density functional study of ternary topological insulator thin films
201008Analytical Model of Short-Channel Double-Gate JFETsChang, Jiwon; Kapoor, Ashok K.; Register, Leonard F., et alARTICLE132 Analytical Model of Short-Channel Double-Gate JFETs

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