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Lee, Zonghoon (이종훈)

Department
School of Materials Science and Engineering(신소재공학부)
Research Interests
Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials
Lab
Atomic-Scale Electron Microscopy (ASEM) Lab
E-Mail
zhlee@unist.ac.kr
Website
http://ASEMLab.org/
This table browses all dspace content
Issue DateTitleAuthor(s)TypeViewAltmetrics
201701Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on GrapheneHong, Hyo-Ki; Jo, Junhyeon; Hwang, Daeyeon, et alARTICLE290 Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene
201701A high-performance transparent graphene/vertically aligned carbon nanotube (VACNT) hybrid electrode for neural interfacingJeong, Du Won; Kim, Gook Hwa; Kim, Na Yeon, et alARTICLE192 A high-performance transparent graphene/vertically aligned carbon nanotube (VACNT) hybrid electrode for neural interfacing
201612Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materialsJo, Seungki; Park, Sung Hoon; Ban, Hyeong Woo, et alARTICLE254 Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materials
201612High surface area carbon from polyacrylonitrile for high performance electrochemical capacitive energy storageGupta, Kishor; Liu, Tianyuan; Kavian, Reza, et alARTICLE242 High surface area carbon from polyacrylonitrile for high performance electrochemical capacitive energy storage
201611Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic ImplicationsZhang, Xu; Huang, Yuan; Chen, Shanshan, et alARTICLE188 Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications
201611Very high frequency plasma reactant for atomic layer depositionOh, Il-Kwon; Yoo, Gilsang; Yoon, Chang Mo, et alARTICLE260 Very high frequency plasma reactant for atomic layer deposition
201610The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for SupercapacitorsChen, Jiafeng; Han, Yulei; Kong, Xianghua, et alARTICLE213 The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors
201610Effect of Al2O3 deposition on performance of top-gated monolayer MoS2 based field effect transistorSong, Jeong-Gyu; Kim, Seok Jin; Woo, Whang Je, et alARTICLE190 Effect of Al2O3 deposition on performance of top-gated monolayer MoS2 based field effect transistor
201610High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performancesKim, S,-Y.; Kim, K.; Hwang, Y.H., et alARTICLE282 High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performances
201608Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopyKim, Minjung; Han, Songhee; Kim, Jung Hwa, et alARTICLE126 Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy
201608Surface treatment process applicable to next generation graphene-based electronicsKim, Ki Seok; Hong, Hyo-Ki; Jung, Haneal, et alARTICLE316 Surface treatment process applicable to next generation graphene-based electronics
201605Creating Pores on Graphene Platelets by Low-Temperature KOH Activation for Enhanced Electrochemical PerformanceWu, Shuilin; Chen, Guanxing; Kim, Nayeon, et alARTICLE285 Creating Pores on Graphene Platelets by Low-Temperature KOH Activation for Enhanced Electrochemical Performance
201605Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2SKim, Youngchan; Bark, Hunyoung; Ryu, Gyeong Hee, et alARTICLE376 Wafer-scale monolayer MoS2 grown by chemical vapor deposition using a reaction of MoO3 and H2S
201603Uniform, large-area self-limiting layer synthesis of tungsten diselenidePark, Kyunam; Kim, Youngjun; Song, Jeong-Gyu, et alARTICLE298 Uniform, large-area self-limiting layer synthesis of tungsten diselenide
201603Microstructural study on degradation mechanism of layered LiNi0.6Co0.2Mn0.2O2 cathode materials by analytical transmission electron microscopyKim, Na Yeon; Yim, Taeeun; Song, Jun Ho, et alARTICLE374 Microstructural study on degradation mechanism of layered LiNi0.6Co0.2Mn0.2O2 cathode materials by analytical transmission electron microscopy
201602Raman Signatures of Polytypism in Molybdenum DisulfideLee, Jae-Ung; Kim, Kangwon; Han, Songhee, et alARTICLE260 Raman Signatures of Polytypism in Molybdenum Disulfide
201601Synthesis of aligned symmetrical multifaceted monolayer hexagonal boron nitride single crystals on resolidified copperTay, Roland Yingjie; Park, Hyo Ju; Ryu, Gyeong Hee, et alARTICLE415 Synthesis of aligned symmetrical multifaceted monolayer hexagonal boron nitride single crystals on resolidified copper
201601Self-Limiting Layer Synthesis of Transition Metal DichalcogenidesKim, Youngjun; Song, Jeong-Gyu; Park, Yong Ju, et alARTICLE324 Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides
201601Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfideRyu, Gyeong Hee; Lee, Jongyeong; Kim, Na Yeon, et alARTICLE308 Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide
201511Recent observations of structure, in situ defect formation, and synthesis of 2D materials using atomic-resolution TEMLee, ZonghoonARTICLE235

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