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Lee, Zonghoon (이종훈)

Department
School of Materials Science and Engineering(신소재공학부)
Research Interests
Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials
Lab
Atomic-Scale Electron Microscopy (ASEM) Lab
E-Mail
zhlee@unist.ac.kr
Website
http://ASEMLab.org/
This table browses all dspace content
Issue DateTitleAuthor(s)TypeViewAltmetrics
201705Superaerophobic graphene nano-hills for direct hydrazine fuel cellsAkbar, Kamran; Kim, Jung Hwa; Lee, Zonghoon, et alARTICLE29 Superaerophobic graphene nano-hills for direct hydrazine fuel cells
201705Sulfur-Modified Graphitic Carbon Nitride Nanostructures as an Efficient Electrocatalyst for Water OxidationKale, Vinayak S.; Sim, Uk; Yang, Jiwoong, et alARTICLE35 Sulfur-Modified Graphitic Carbon Nitride Nanostructures as an Efficient Electrocatalyst for Water Oxidation
201705Role of Graphene in Water-Assisted Oxidation of Copper in Relation to Dry Transfer of GrapheneLuo, Da; You, Xueqiu; Li, Bao-Wen, et alARTICLE32 Role of Graphene in Water-Assisted Oxidation of Copper in Relation to Dry Transfer of Graphene
201703Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuationPark, Young Woon; Jerng, Sahng-Kyoon; Jeon, Jae Ho, et alARTICLE257 Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation
201703Controlled Folding of Single Crystal GrapheneWang, Bin; Huang, Ming; Kim, Na Yeon, et alARTICLE33 Controlled Folding of Single Crystal Graphene
201703On-stack two-dimensional conversion of MoS2 into MoO3Ko, Taeg Yeong; Jeong, Areum; Kim, Wontaek, et alARTICLE86 On-stack two-dimensional conversion of MoS2 into MoO3
201703Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect TransistorsLee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo, et alARTICLE41 Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors
201703Synthesis and Properties of Two Dimensional Doped Transition Metal DichalcogenidesYoon, Aram; Lee, ZonghoonARTICLE33 Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides
201703Substantial improvements of long-term stability in encapsulation-free WS2 using highly interacting graphene substrateKim, Se-Yang; Kwak, Jinsung; Kim, Jung Hwa, et alARTICLE181 Substantial improvements of long-term stability in encapsulation-free WS2 using highly interacting graphene substrate
201701Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on GrapheneHong, Hyo-Ki; Jo, Junhyeon; Hwang, Daeyeon, et alARTICLE111 Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene
2017A high-performance transparent graphene/vertically aligned carbon nanotube (VACNT) hybrid electrode for neural interfacingJeong, Du Won; Kim, Gook Hwa; Kim, Na Yeon, et alARTICLE92 A high-performance transparent graphene/vertically aligned carbon nanotube (VACNT) hybrid electrode for neural interfacing
201612High surface area carbon from polyacrylonitrile for high performance electrochemical capacitive energy storageGupta, Kishor; Liu, Tianyuan; Kavian, Reza, et alARTICLE131 High surface area carbon from polyacrylonitrile for high performance electrochemical capacitive energy storage
201612Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materialsJo, Seungki; Park, Sung Hoon; Ban, Hyeong Woo, et alARTICLE138 Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materials
201611Very high frequency plasma reactant for atomic layer depositionOh, Il-Kwon; Yoo, Gilsang; Yoon, Chang Mo, et alARTICLE182 Very high frequency plasma reactant for atomic layer deposition
201611Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic ImplicationsZhang, Xu; Huang, Yuan; Chen, Shanshan, et alARTICLE104 Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications
201610Effect of Al2O3 deposition on performance of top-gated monolayer MoS2 based field effect transistorSong, Jeong-Gyu; Kim, Seok Jin; Woo, Whang Je, et alARTICLE138 Effect of Al2O3 deposition on performance of top-gated monolayer MoS2 based field effect transistor
201610High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performancesKim, S,-Y.; Kim, K.; Hwang, Y.H., et alARTICLE188 High-resolution, electrohydrodynamic inkjet printing of stretchable, metal oxide semiconductor transistors with high performances
201610The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for SupercapacitorsChen, Jiafeng; Han, Yulei; Kong, Xianghua, et alARTICLE143 The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors
201608Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopyKim, Minjung; Han, Songhee; Kim, Jung Hwa, et alARTICLE64 Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy
201608Surface treatment process applicable to next generation graphene-based electronicsKim, Ki Seok; Hong, Hyo-Ki; Jung, Haneal, et alARTICLE235 Surface treatment process applicable to next generation graphene-based electronics

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