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신형준

Shin, Hyung-Joon
Nanoscale Materials Science Lab.
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Modified gap states in Fe/MgO/SrTiO3 interfaces studied with scanning tunneling microscopy

Author(s)
Shin, Hyung-JoonKim, Seong HeonYang, HeejunKuk, Young
Issued Date
2014-12
DOI
10.1016/j.cap.2014.09.012
URI
https://scholarworks.unist.ac.kr/handle/201301/8722
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84908116400
Citation
CURRENT APPLIED PHYSICS, v.14, no.12, pp.1692 - 1695
Abstract
The geometric and electronic structures of Fe islands on MgO film layers were studied with scanning tunneling microscopy and spectroscopy. The MgO layers were grown on a Nb-doped single crystal SrTiO3 (100) surface. Deposited Fe atoms aggregate into islands, the height and diameter of which are about 2.5 and 9.4 nm respectively. Fe islands modify the electronic structure of MgO surface; a ring type depression in the scanning tunneling microscope topography appears by lowered local electron density of states around Fe islands. We find that adsorbed Fe atoms reduce the gap states of MgO layers around Fe islands, which is attributed to the reason for the depletion of the electronic density of states.
Publisher
ELSEVIER SCIENCE BV
ISSN
1567-1739
Keyword (Author)
Interface stateMgOSrTiO3STMSTS
Keyword
SRTIO3(001) SURFACEROOM-TEMPERATUREMAGNETORESISTANCECATALYSTSENERGYFILMSGOLD

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