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Strained Silicon Fin-Based High Electron Mobility Transistor for Optimal Device Design of Performance and Reliability
- Author(s)
- Kim, Sung-Ho
- Advisor
- Kim, Kyung Rok
- Issued Date
- 2021-02
- URI
- https://scholarworks.unist.ac.kr/handle/201301/82447 http://unist.dcollection.net/common/orgView/200000373968
- Publisher
- Ulsan National Institute of Science and Technology (UNIST)
- Degree
- Doctor
- Major
- Department of Electrical Engineering
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