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Choi, Moon Kee
Nano/Bio Electronics Lab.
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dc.citation.title NATURE ELECTRONICS -
dc.contributor.author Kim, Dong Chan -
dc.contributor.author Seung, Hyojin -
dc.contributor.author Yoo, Jisu -
dc.contributor.author Kim, Junhee -
dc.contributor.author Song, Hyeon Hwa -
dc.contributor.author Kim, Ji Su -
dc.contributor.author Kim, Yunho -
dc.contributor.author Lee, Kyunghoon -
dc.contributor.author Choi, Changsoon -
dc.contributor.author Jung, Dongjun -
dc.contributor.author Park, Chansul -
dc.contributor.author Heo, Hyeonjun -
dc.contributor.author Yang, Jiwoong -
dc.contributor.author Hyeon, Taeghwan -
dc.contributor.author Choi, Moon Kee -
dc.contributor.author Kim, Dae-Hyeong -
dc.date.accessioned 2024-05-10T10:35:11Z -
dc.date.available 2024-05-10T10:35:11Z -
dc.date.created 2024-05-07 -
dc.date.issued 2024-04 -
dc.description.abstract Stretchable displays that can change their shape and size under strain could be used to create displays with unconventional form factors. However, intrinsically stretchable light-emitting devices have poor luminous performance, such as low brightness. Here we show that intrinsically stretchable quantum dot light-emitting diodes (QLEDs) can be made using a mechanically soft and stretchable emissive layer consisting of a ternary nanocomposite of colloidal quantum dots, an elastomeric polymer and a charge transport polymer. The light-emitting layer maintains a nearly constant interparticle distance even under 50% strain, ensuring reliable operation of the QLED under stretching. The polymer-rich charge transport region at the bottom of the nanocomposite functions as a hole transport pathway to the embedded quantum dots. The QLEDs exhibit a turn-on voltage of 3.2 V and a maximum luminance of 15,170 cd m-2 at 6.2 V without loss of brightness, even when under 50% strain, and can be used to make stretchable full-colour passive-matrix QLED arrays. Using an intrinsically stretchable nanocomposite of quantum dots, an elastomer and a hole transport polymer as an emissive layer, stretchable light-emitting diodes can be fabricated that exhibit high brightness even under 50% strain. -
dc.identifier.bibliographicCitation NATURE ELECTRONICS -
dc.identifier.doi 10.1038/s41928-024-01152-w -
dc.identifier.issn 2520-1131 -
dc.identifier.scopusid 2-s2.0-85190372145 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/82347 -
dc.identifier.wosid 001202862700001 -
dc.language 영어 -
dc.publisher NATURE PORTFOLIO -
dc.title Intrinsically stretchable quantum dot light-emitting diodes -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic -
dc.relation.journalResearchArea Engineering -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus DEVICES -

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