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Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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dc.citation.endPage 95 -
dc.citation.number 1 -
dc.citation.startPage 75 -
dc.citation.title JOURNAL OF INFORMATION DISPLAY -
dc.citation.volume 25 -
dc.contributor.author Ahmed, Aziz -
dc.contributor.author Chung, Kunook -
dc.contributor.author Park, Won Il -
dc.contributor.author Yi, Gyu-Chul -
dc.date.accessioned 2024-03-14T17:35:08Z -
dc.date.available 2024-03-14T17:35:08Z -
dc.date.created 2024-03-11 -
dc.date.issued 2024-01 -
dc.description.abstract This review summarizes research activities on two-dimensional (2D) materials-assisted epitaxy of inorganic semiconductors and their optoelectronic device applications. We presented the overall research related to the growth of epitaxial semiconductor layers on 2D van der Waals materials and discussed various methods to perform controlled growth of semiconductor nanostructures and microstructures on 2D layers. The 2D layers' benefits in semiconductor technology and their role in non-destructive micro-crystallographic analysis, integration of heterogeneous semiconductor devices, and the fabrication of detachable semiconductor devices. This is followed by an in-depth discussion on 2D materials-assisted growth and non-destructive transfer of random and regular semiconductor arrays and their applications in free-standing, flexible, individually addressable semiconductor optoelectronic devices, including micro display applications. The research covered in this review promotes novel applications of semiconductors grown on 2D materials and exploits ways to synergistically combine their functionalities. -
dc.identifier.bibliographicCitation JOURNAL OF INFORMATION DISPLAY, v.25, no.1, pp.75 - 95 -
dc.identifier.doi 10.1080/15980316.2024.2312942 -
dc.identifier.issn 1598-0316 -
dc.identifier.scopusid 2-s2.0-85185334715 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/81657 -
dc.identifier.wosid 001165871200001 -
dc.language 영어 -
dc.publisher TAYLOR & FRANCIS LTD -
dc.title Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Materials Science -
dc.type.docType Article; Early Access -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.description.journalRegisteredClass kci -
dc.subject.keywordAuthor Semiconductor/2D heterostructure -
dc.subject.keywordAuthor Non-destructive microstructural characterization -
dc.subject.keywordAuthor Device integration -
dc.subject.keywordAuthor 2D-assisted semiconductor lift-off -
dc.subject.keywordAuthor Flexible semiconductor devices -
dc.subject.keywordPlus LIGHT-EMITTING-DIODES -
dc.subject.keywordPlus BORON-NITRIDE -
dc.subject.keywordPlus REMOTE EPITAXY -
dc.subject.keywordPlus DOUBLE-HETEROSTRUCTURE -
dc.subject.keywordPlus ZNO NANOSTRUCTURES -
dc.subject.keywordPlus MONOLAYER GRAPHENE -
dc.subject.keywordPlus NANOWIRE GROWTH -
dc.subject.keywordPlus INAS NANOWIRES -
dc.subject.keywordPlus GAN NANOWIRES -
dc.subject.keywordPlus 2D MATERIALS -

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