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DC Field | Value | Language |
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dc.citation.conferencePlace | FR | - |
dc.citation.conferencePlace | Montpellier, France | - |
dc.citation.title | ICPS 2018 (34th International Conference on the Physics of Semiconductors) | - |
dc.contributor.author | Park, Kibog | - |
dc.contributor.author | Yoon, Hoon Hahn | - |
dc.contributor.author | Song, Wonho | - |
dc.contributor.author | Jung, Sungchul | - |
dc.contributor.author | Kim, Junhyung | - |
dc.contributor.author | Choi, Gahyun | - |
dc.contributor.author | Mo, Kyuhyung | - |
dc.contributor.author | Lee, Jong Hoon | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.date.accessioned | 2024-02-01T01:37:59Z | - |
dc.date.available | 2024-02-01T01:37:59Z | - |
dc.date.created | 2019-01-05 | - |
dc.date.issued | 2018-07-31 | - |
dc.description.abstract | It is observed that the electric dipole layer due to the shift of bonding electrons (chemical interaction) at metal/graphene interface can induce the negative Fermi-level pinning effect in metal/graphene/n-GaAs(001) junction, supported by the Schottky barrier decreasing as metal work-function increasing in the current-voltage characteristics of junction. The chemical interaction dipole layer and the work-function difference between metal and graphene determine combinedly the profile of electrostatic potential across the metal/graphene interface. In particular, this combined effect is influential to the local Schottky barrier formed on the region of GaAs surface with low interface-trap density. The graphene insertion layer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The electron transport through metal/graphene/n-GaAs(001) junction is dominated by the low Schottky barrier patches. Under the negative Fermi-level pinning, these low Schottky barrier patches will correspond to the low interface-trap density regions for metals with large work-functions. Our work provides an experimental method to form Schottky (metal/GaAs) and Ohmic (metal/graphene/GaAs) contacts simultaneously with one-time metal electrode deposition by covering the GaAs substrate partially with graphene. |
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dc.identifier.bibliographicCitation | ICPS 2018 (34th International Conference on the Physics of Semiconductors) | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/81103 | - |
dc.language | 영어 | - |
dc.publisher | International Union of Pure and Applied Physics (IUPAP) | - |
dc.title | Negative Fermi-Level Pinning at Metal/GaAs Junction Occurring with Graphene Insertion Layer | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2018-07-29 | - |
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