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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 103 | - |
dc.contributor.author | Rossi, Massimiliano | - |
dc.contributor.author | Mun, Bongjin S. | - |
dc.contributor.author | Enta, Yoshiharti | - |
dc.contributor.author | Fadley, Charles S. | - |
dc.contributor.author | Lee, Ki-Suk | - |
dc.contributor.author | Kim, Sang-Koog | - |
dc.contributor.author | Shin, Hyun-Joon | - |
dc.contributor.author | Hussain, Zahid | - |
dc.contributor.author | Ross, Philip N., Jr. | - |
dc.date.accessioned | 2023-12-22T08:45:19Z | - |
dc.date.available | 2023-12-22T08:45:19Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2008-02 | - |
dc.description.abstract | e initial stages of wet thermal oxidation of Si (100) - (2×1) have been investigated by in situ ambient pressure x-ray photoemission spectroscopy, including chemical-state resolution via Si 2p core-level spectra. Real-time growth rates of silicon dioxide have been monitored at 100 mTorr of water vapor. This pressure is considerably higher than in any prior study using x-ray photoemission spectroscopy. Substrate temperatures have been varied between 250 and 500 °C. Above a temperature of ∼400 °C, two distinct regimes, a rapid and a quasisaturated one, are identified, and growth rates show a strong temperature dependence which cannot be explained by the conventional Deal-Grove model. | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.103, no.4, pp.1 - 4 | - |
dc.identifier.doi | 10.1063/1.2832430 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.scopusid | 2-s2.0-40149110191 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7803 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=40149110191 | - |
dc.identifier.wosid | 000254191300059 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | In situ observation of wet oxidation kinetics on Si(100) via ambient pressure x-ray photoemission spectroscopy | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | 2P CORE-LEVEL | - |
dc.subject.keywordPlus | THERMAL-OXIDATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | GROWTH | - |
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