File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Shin, Hyung-Joon
- Nanoscale Materials Science Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Trapped carrier dynamics in dielectric nanodots
- Author(s)
- Yang, H., Shin, Hyung-Joon, Kuk, Y.
- Issued Date
- 2010-05
- Citation
- CURRENT APPLIED PHYSICS, v.10, no.3, pp.957 - 961
- Abstract
- Trapped carrier dynamics has been studied on Si3 N4 nanodots grown by plasma enhanced chemical vapor deposition (PECVD) and on SiO2 nanodots grown by pulsed laser deposition (PLD) on Si wafers. Carrier dynamics can be explained with a model based on Coulomb interaction with the boundary conditions of the nanodot structure. The trapped charge can be estimated quantitatively from the measured trap dynamics, elucidating the electrostatic effect in a small dielectric system.
- Publisher
- ELSEVIER SCIENCE BV
- ISSN
- 1567-1739
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.