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Yoo, Jung-Woo
Nano Spin Transport Lab.
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dc.citation.endPage 2388 -
dc.citation.number 21-22 -
dc.citation.startPage 2385 -
dc.citation.title SYNTHETIC METALS -
dc.citation.volume 160 -
dc.contributor.author Li, Bin -
dc.contributor.author Yoo, Jung-Woo -
dc.contributor.author Kao, Chi-Yueh -
dc.contributor.author Epstein, Arthur J. -
dc.date.accessioned 2023-12-22T06:40:43Z -
dc.date.available 2023-12-22T06:40:43Z -
dc.date.created 2014-10-24 -
dc.date.issued 2010-11 -
dc.description.abstract We report a pentacene-based bistable memory device using Fe as the top electrode and compare it to the Al/pentacene/Al devices. The device displays stable switching from the low-current OFF state to the high-current ON state and long retention time. Our results suggest that Fe has the advantage over Al as the top electrode because it lowers the switching threshold voltage. The Fe devices exhibit similar temperature-dependent behaviors with the reported Al/pentacene/Al devices [D. Tondelier, K. Lmimouni, D. Vuillaume, Appl. Phys. Lett. 85 (2004) 5763]. The device is promising as a write-once read-many (WORM) memory. -
dc.identifier.bibliographicCitation SYNTHETIC METALS, v.160, no.21-22, pp.2385 - 2388 -
dc.identifier.doi 10.1016/j.synthmet.2010.09.003 -
dc.identifier.issn 0379-6779 -
dc.identifier.scopusid 2-s2.0-78049530471 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7752 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=78049530471 -
dc.identifier.wosid 000284815400027 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE SA -
dc.title Impact of electrode metals on a pentacene-based write-once read-many memory device -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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