Enhancement of ferroelectricity in strained BaTiO3 thin films
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- Enhancement of ferroelectricity in strained BaTiO3 thin films
- Choi, Kyoung Jin; Biegalski, M; Li, YL; Sharan, A; Schubert, J; Uecker, R; Reiche, P; Chen, YB; Pan, XQ; Gopalan, V; Chen, LQ; Schlom, DG; Eom, CB
- ELECTRICAL-PROPERTIES; THICKNESS DEPENDENCE; HETEROSTRUCTURES; SUPERLATTICES; POLARIZATION; MULTILAYERS; TEMPERATURE; TRANSITION; DEFECTS
- Issue Date
- AMER ASSOC ADVANCEMENT SCIENCE
- SCIENCE, v.306, no.5698, pp.1005 - 1009
- Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500degreesC higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
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