File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Enhancement of ferroelectricity in strained BaTiO3 thin films

Author(s)
Choi, Kyoung JinBiegalski, MLi, YLSharan, ASchubert, JUecker, RReiche, PChen, YBPan, XQGopalan, VChen, LQSchlom, DGEom, CB
Issued Date
2004-11
DOI
10.1126/science.1103218
URI
https://scholarworks.unist.ac.kr/handle/201301/7678
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=8344268623
Citation
SCIENCE, v.306, no.5698, pp.1005 - 1009
Abstract
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500degreesC higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
ISSN
0036-8075

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.