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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment

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Title
Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment
Author
Kim, IGChoi, Kyoung JinLee, JL
Keywords
ULTRAVIOLET-ASSISTED OXIDATION; LAYERS; SIGE; SILICON
Issue Date
200503
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.23, no.2, pp.495 - 498
Abstract
Effects of inductively coupled plasma (ICP) treatment on Fermi level pinning on the surface of Si0.83 Ge0.17 was studied by current-voltage and x-ray photoemission spectroscopy measurements. ICP treatment induced the growth of silicon oxide, suggesting that Si vacancies are generated under the oxide. From linear fitting of Schottky barrier heights with metal work functions, it was found that surface state density increased from 6.60× 1012 to 1.13× 1013 cm2 eV by the ICP treatment, leading to the pinning of surface Fermi level about EC ∼0.53 eV. From this, it is suggested that the Si vacancies are the main surface states in pinning Fermi level on the ICP-treated surface.
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DOI
http://dx.doi.org/10.1116/1.1868652
ISSN
1071-1023
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MSE_Journal Papers
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