dc.citation.conferencePlace |
KO |
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dc.citation.title |
대한화학회 제 129회 총회 및 학술발표회 |
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dc.contributor.author |
Choi, Deokjae |
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dc.contributor.author |
Seo, Kwanyong |
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dc.date.accessioned |
2024-01-31T20:38:44Z |
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dc.date.available |
2024-01-31T20:38:44Z |
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dc.date.created |
2023-01-06 |
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dc.date.issued |
2022-04-14 |
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dc.description.abstract |
Radial junctions on crystalline silicon (c-Si) microwire structures considerably reduce the diffusion length of photo-induced minority carriers required for energy generation by decoupling light absorption and carrier separation in orthogonal spatial direction. Hence, radial junctions mitigate the need for high-purity materials, and thus reduce the fabrication cost of c-Si solar cells. In this study, the formation of dopant-free radial junctions from atomic layer deposition (ALD) of Al2O3 on an n-c-Si microwire surface is reported. ALD-Al2O3 generates a p+ inversion layer, which eventually forms the radial junction on the n-c-Si surface. The width of depletion region induced by the p+ inversion layer is calculated from PC1D simulation as 900 nm. The fabricated dopant-free radial junction c-Si solar cells exhibits a power conversion efficiency of 20.1%, which is higher than those of previously reported microwire-based radial junction solar cells. Notably, internal quantum efficiencies of over 90% were obtained in the 300–980 nm wavelength region, thereby verifying the successful formation of radial junctions. |
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dc.identifier.bibliographicCitation |
대한화학회 제 129회 총회 및 학술발표회 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/76202 |
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dc.identifier.url |
https://new.kcsnet.or.kr/?mid=abstract_view&uid=62392&page=1&qpage=&word=Deokjae&wordfield=author&main_number=129 |
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dc.publisher |
대한화학회 |
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dc.title |
Field-induced radial junction for dopant-free crystalline silicon solar cells with an efficiency of over 20% |
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dc.type |
Conference Paper |
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dc.date.conferenceDate |
2022-04-13 |
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