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DC Field | Value | Language |
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dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | Denver, Co | - |
dc.citation.endPage | 905 | - |
dc.citation.startPage | 902 | - |
dc.citation.title | IEEE/MTT-S International Microwave Symposium | - |
dc.contributor.author | Kim, Myungsoo | - |
dc.contributor.author | Docoumau, Guillaume | - |
dc.contributor.author | Skrzypczak, Simon | - |
dc.contributor.author | Szriftgiser, Pascal | - |
dc.contributor.author | Yang, Sung Jin | - |
dc.contributor.author | Wainstein, Nicolas | - |
dc.contributor.author | Stern, Keren | - |
dc.contributor.author | Happy, Henri | - |
dc.contributor.author | Yalon, Eilam | - |
dc.contributor.author | Pallecchi, Emiliano | - |
dc.contributor.author | Akinwande, Deji | - |
dc.date.accessioned | 2024-01-31T20:10:39Z | - |
dc.date.available | 2024-01-31T20:10:39Z | - |
dc.date.created | 2023-01-11 | - |
dc.date.issued | 2022-06-19 | - |
dc.description.abstract | High performance non-volatile analog switches based on monolayer MoS2 are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS2 enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS2 switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10x higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems. | - |
dc.identifier.bibliographicCitation | IEEE/MTT-S International Microwave Symposium, pp.902 - 905 | - |
dc.identifier.doi | 10.1109/IMS37962.2022.9865419 | - |
dc.identifier.scopusid | 2-s2.0-85137979817 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/75825 | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Towards 500 GHz Non-volatile Monolayer 6G Switches | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2022-06-19 | - |
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