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- Baik, Jeong Min
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 585 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 583 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 82 | - |
| dc.contributor.author | Baik, Jeong Min | - |
| dc.contributor.author | Jang, HW | - |
| dc.contributor.author | Kim, JK | - |
| dc.contributor.author | Lee, JL | - |
| dc.date.accessioned | 2023-12-22T11:36:09Z | - |
| dc.date.available | 2023-12-22T11:36:09Z | - |
| dc.date.created | 2014-10-17 | - |
| dc.date.issued | 2003-01 | - |
| dc.description.abstract | The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585 | - |
| dc.identifier.doi | 10.1063/1.1541111 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-0037468076 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7398 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037468076 | - |
| dc.identifier.wosid | 000180564000033 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Effect of microstructural change on magnetic property of Mn-implanted p-type GaN | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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